Conductive paste and grid electrode for silicon solar cells

ABSTRACT

A method for producing a solar cell electrode, comprising the steps of: applying on at least part of a light-receiving surface of a semiconductor substrate a conductive paste comprising conductive component, glass frit, and resin binder, wherein the conductive component comprises silver particles and core-shell particles in which a metal selected from the group consisting of Pd, Ir, Pt, Ru, Ti, and Co is coated on a surface of silver or copper; and firing the conductive paste.

This application is a divisional application of Ser. No. 12/719,178filed on Mar. 8, 2010, which is a continuation of Ser. No. 12/072,543,filed on Feb. 26, 2008.

BACKGROUND OF INVENTION

1. Field of the Invention

The present invention relates to a conductive paste for a solar cell,and more particularly, to an electrically conductive paste used to formgrid electrodes for Si solar cell.

2.Technical Background

Silver paste is widely used for the electrode paste used in siliconsolar cells, since electrode pastes for solar cells are required to havelow electrical resistance to facilitate improved efficiency.

In the case of silicon solar cells in which electrodes are formed onboth sides, the light receiving side paste usually contains, as basiccomponents, electrically conductive particles in the form of Ag, binder,glass frit and a solvent (see, for example, Japanese Patent ApplicationLaid-open No. 2006-295197). Silver is generally used as the metal powderfor grid electrodes in solar cells. In Japanese Patent ApplicationLaid-open No. 2006-295197, examples of electrically conductive particlesinclude metal particles selected from the group consisting of Cu, Au,Ag, Pd, Pt, alloys of Cu, Au, Ag, Pd and Pt, and mixtures thereof.

A typical method for producing solar cell electrodes is to a) print asolar cell paste onto certain locations on a substrate, and b) fire thesolar cell paste in a firing furnace. When a screen printing process isused, electrodes for solar cells in which the substrate is crystallinesilicon are often fired at peak temperatures of 750 to 800° C. using abelt type IR furnace.

It would be desirable, in the interest of improving solar cellproduction efficiency, to fire several solar cells at the same time, ina large-scale firing furnace. However, a certain degree of variation intemperature can occur in firing furnaces, which can adversely affect thesolar cell conversion efficiency. When electrode paste is used forceramic substrates, degree of variation in firing temperature onlyaffects on line resistance slightly. In solar cells, however, thevariation is an element directly related to conversion efficiency, whichis a key factor related to the quality of solar cells, and even a smallreduction would be welcome.

When currently available electrode paste is used, there is about 30° C.of variance in the firing conditions that are considered suitable interms of conversion efficiency. Outside of this temperature range, theconversion efficiency decreases precipitously. One reason that theconversion efficiency of solar cells is dependent on the firingtemperature range is that a good electrical connection between theelectrodes and solar cell substrate occurs within a particulartemperature range and such a good connection is not obtained when firingtakes place outside the suitable firing temperature range. Whenlarge-scale firing furnaces are used, requiring a narrow temperaturerange leads to lower yields. A more expanded range of suitable firingtemperatures would be desirable both for large scale firing arrangementsand where small-scale firing furnaces are used.

SUMMARY OF THE INVENTION

The present invention expands the firing temperature range for gridelectrodes in crystalline silicon solar cells. In the present invention,specific metals are added, in addition to use of silver, as metalconductors. These specific metals may be used in the form of metalparticles, alloy particles, or as coating for plating or the like.

In the present invention, the addition of specific metals makes itpossible to expand the firing temperature ranges, within which a goodelectrical connection can be obtained between the electrodes and solarcell substrate. Solar cells with high conversion efficiency can thus beobtained within a border firing temperature range than was possible inthe past.

Specifically, the present invention is a conductive paste for gridelectrodes in solar cells comprising a conductive component, glass frit,and resin binder, wherein the conductive component is selected from thegroup consisting of (i) silver particles and metal particles selectedfrom the group consisting of Pd, Ir, Pt, Ru, Ti, and Co, (ii) alloyparticles comprising silver and metal selected from the group consistingof Pd, Ir, Pt, Ru, Ti, and Co and (iii) silver particles and core-shellparticles in which a metal selected from the group consisting of Pd, Ir,Pt, Ru, Ti, and Co is coated on the surface of silver or copper.

The present invention is also related to a method for producing solarcell electrodes using the above paste, and to solar cell electrodesformed using the paste.

The paste of the invention can be used at a broad range of temperaturesand is suitable for mass production in large-scale firing furnaces.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates the cross sectional structure of the solar cellelements in the invention; FIG. 2 illustrates an example of theelectrode layer configuration relating to the invention, where FIG. 2(a) is the light-receiving side (surface), and FIG. 2( b) is the sidethat does not receive light (reverse); and

FIG. 3 schematically illustrates the configuration of an Al electrode,7, on the reverse and a grid electrode, 8, on the surface prepared in anexample.

DETAILED DESCRIPTION OF THE INVENTION

The present invention is a conductive paste for grid electrodes in solarcells comprising (A) conductive component, (B) glass frit, and (C) resinbinder as described below.

(A) Conductive component

In the present invention, the following may be used as the conductivecomponent: (i) a mixture of silver particles and specific metalparticles, (ii) alloy particles of silver and a specific metal, or (iii)metal particles surface-coated with silver and a specific metal.

Which form will be used will be determined in consideration ofconductivity, availability, stability, cost, and the like. Silver is ametal with lower electrical resistance among metals, and the absoluteamount of metal powder added is preferably lower out of concern forlower conductor resistance. The addition of alloy powder or coatingpowder to the paste can be expected to result in lower resistance andbetter electrical contact.

An embodiment of the combined use of silver particles and specific metalparticles is described below.

Silver (Ag) particles are used as an electrically conductive metal. Thesilver particle may be in the shape of flakes, spheres or may beamorphous. Although there are no particular limitations on the particlediameter of the silver particles, from the viewpoint of technicaleffects in the case of being used as an ordinary electrically conductivepaste, particle diameter has an effect on the firing characteristics ofthe silver (for example, silver particle having a large particlediameter are fired at a slower rate than silver particle having a smallparticle diameter). Thus, although the particle diameter (d50) ispreferably within the range of 0.1 to 10.0 μm, the particle diameter ofthe silver particle actually used is determined according to the firingprofile. Moreover, it is necessary that the silver particle have aparticle diameter suited for methods for applying an electricallyconductive paste (for example, screen printing). In the presentinvention, two or more types of silver particles having differentparticle diameters may be used as a mixture.

Preferably, the silver has a high purity (greater than 99%). However,substances of lower purity can be used depending on the electricalrequirements of the electrode pattern.

Although there are no particular limitations on the silver contentprovided it is an amount that allows the object of the present inventionto be achieved, in the case of silver particle, the silver content ispreferably 40 to 90% by weight based on the weight of the paste.

The additional metals to be added are selected from the group consistingof Pd (palladium), Ir (iridium), Pt (platinum), Ru (ruthenium), Ti(titanium) and Co (cobalt). Two or more of these metals can be used incombination. Preferably, Pd is used in terms of high efficiency requiredof solar cell.

Adding particles of the above specific metals will allow the firingtemperature ranges to be expanded. That is, solar cells having highconversion efficiency may be obtained despite some temperature variationin firing furnaces. Solar cells having high conversion efficiency mayalso be obtained despite deviation from the target firing temperature asa result of imperfect control of the firing furnace. Given the steadyprogress in the mass production of solar cells, effects such as theabove can be considered extremely significant in the actualmanufacturing process.

When a metal, such as palladium is added, the added metal and thesilicon present in the substrate are expected to react, forming an alloylayer referred to as a silicide in the interface between the electrodeand silicon substrate. This alloy layer may have an effect in loweringcontact resistance.

In addition, at firing temperatures resulting in the greatest conversionexchange, the alloying of the Al (electrode material on the reverseside) and Si (substrate material) tends to result in protrusions in theform of beads on the reverse side of solar cells. It was conventionallynecessary to fire materials at lower temperatures that are less likelyto result in protrusions in the form of beads in order to control theformation of such beads. This problem can also be overcome in thepresent invention.

The amount of specific metal is preferably in the range of 0.01 to 10 wt% and any ranges contained therein, and more preferably 0.05 to 5wt %based on the weight of the paste. If the amount of specific metal isexcessively low, the advantage of the present invention becomes small.In addition, if the amount of specific metal is excessively high,conductor resistance increases, fireability decreases and costsincrease. However, the specific metals to be added are inexpensive, andgreater amounts may be added if the conductor wiring resistance is lowenough.

The mean particle diameter (PSD D50) of the specific metal particles ispreferably 0.1 to 20 μm.

Silver may be alloyed with specific metal particles as is describedbelow.

A specific metal is selected from the group consisting of Pd(palladium), Ir (iridium), Pt (platinum), Ru (ruthenium), Ti (titanium)and Co (cobalt). Two or more metals can be used in combination.Preferably, Pd is used in terms of high efficiency of obtained solarcell.

The alloy proportions for the alloy are not particularly limited.Amounts of different metals in the alloy is determined by a number offactors. For example, silver and palladium tend to become alloyed nomatter what the proportion in which they are blended. Since palladium ismore expensive than silver, a lower palladium content is preferable fromthe standpoint of cost. A Ag:Pd alloy with wt % Pd preferably between 1and 30%, more preferably between 5 and 20% may be used.

The alloys of the present invention can be produced by methods known inthe art. Commercially available alloys may also be used.

The alloy content is preferred to be 0.01 to 20 wt %, preferably 0.05 to10 wt %, based on the total amount of the weight of the paste. If theamount of specific metal is excessively low, the advantage of thepresent invention becomes small. In addition, if the amount of specificmetal is excessively high, conductor resistance increases, fireabilitydecreases and costs increase.

The mean particle diameter (PSD D50) of the alloy is preferably 0.1 to20 μm.

X-ray diffraction will make it possible to determine whether aconductive powder is an alloy or is a mixture of two or more metals. Forexample, in case of Ag/Pd, when Ag and Pd are not alloyed, the peakcharacteristic of Ag and the peak characteristic of Pd will each beobserved. When alloyed, on the other hand, an alloy peak will beobserved between where the Ag peak should be and where the Pd peakshould be, depending on the proportion of the Ag and Pd.

In one embodiment core-shell particles are used in addition to silverparticles. Core-shell particles are particles in which a specific metal.selected from the group consisting of Pd, Ir, Pt, Ru, Ti, and Co, iscoated on the surface of silver or copper.

The proportion of the core-shell structure is not limited. In terms ofsufficient effect caused by this embodiment, the surface metal can below, as low as 1 vol % of conductive powder, for example. The upperlimit is not limited, but is preferred to be kept to a minimum to reducethe material cost caused by surface metal.

The conductive powder of the present invention can be manufactured by aconventional method for core-shell material. Commercially availablepowder can be used.

The shape of the conductive powder is not particularly limited, and maybe in the form of spherical particles or flakes (rods, cones, orplates).

The content of the core-shell particle is preferred to be 0.01 to 20wt%, preferably 0.05 to 10 wt %, based on the total amount of the weightof the paste. If the amount of the core-shell particle is excessivelylow, the advantage of the present invention becomes small. In addition,if the amount of the core-shell particle is excessively high, conductorresistance increases, fireability decreases and costs increase. However,larger amounts may be added if the specific metal is inexpensive.

The mean particle diameter (PSD D50) of the core-shell particle ispreferably 0.1 to 20 μm. Here, the mean particle diameter (PSD D50)means the particle diameter corresponding to 50% of the integrated valueof the number of particles when the particle size distribution isprepared. The particle size distribution can be prepared using acommercially available measuring device such as the X100 by Microtrac.

As mentioned hereinbefore, the present invention is characterized inthat both silver and specific other metals are used together. Theaddition of a third conductive particle, which is not included in theconcept of silver nor in the list of specific metals, is not precluded.However, the content of the third conductive particles is preferablyless than 2 wt % based on the weight of the paste.

(B) Glass Frit

The electrically conductive paste of the present invention preferablycontains an inorganic binder in the form of glass frit.

Since the chemical composition of the glass frit is not important in thepresent invention, any glass frit can be used provided it is a glassfrit used in electrically conductive pastes for electronic materials.For example, lead borosilicate glass is used preferably. Leadborosilicate glass is a superior material in the present invention fromthe standpoint of both the range of the softening point and glassadhesion. In addition, lead-free glass, such as a bismuth silicatelead-free glass, can also be used.

Although there are no particular limitations on the content of theinorganic binder in the form of the glass frit provided it is an amountthat allows the object of the present invention to be achieved, it is0.5 to 15.0% by weight and preferably 1.0 to 10.0% by weight based onthe weight of the paste. If the amount of the inorganic binder is lessthan 0.5% by weight, adhesive strength may become inadequate. If theamount of the inorganic binder exceeds 15.0% by weight, problems may becaused in the subsequent soldering step due to floating glass and so on.In addition, the resistance value as a conductor also increases.

(C) Resin Binder

The electrically conductive paste of the present invention contains aresin binder. In the present description, the concept of a “resinbinder” includes a mixture of a polymer and thinner. Thus, an organicliquid (also referred to as a thinner) may be contained in the resinbinder. In the present invention, a resin binder containing an organicliquid is preferable, and in the case of high viscosity, an organicliquid can be added separately as a viscosity adjuster as necessary.

In the present invention, any resin binder can be used. Examples of suchresin binders include a pine oil solution, ethylene glycol monobutylether monoacetate solution or ethyl cellulose terpineol solution of aresin (such as polymethacrylate) or ethyl cellulose. In the presentinvention, a terpineol solution of ethyl cellulose (ethyl cellulosecontent: 5 to 50% by weight) is preferably used as a binder.Furthermore, in the present invention, a solvent not containing apolymer, such as water or an organic liquid can be used as a viscosityadjuster. Examples of organic liquids that can be used include alcohols,alcohol esters (such as acetates or propionates), and terpenes (such aspine oil or terpineol).

The content of the resin binder is preferably 10 to 50% by weight basedon the weight of the paste.

(D) Additives

A thickener and/or stabilizer and/or other typical additives may be ormay not be added to the electrically conductive paste of the presentinvention. Examples of other typical additives that can be added includedispersants and viscosity adjusters. The amount of additive isdetermined dependent upon the characteristics of the ultimately requiredelectrically conductive paste. The amount of additive can be suitablydetermined by a person with ordinary skill in the art. Furthermore, aplurality of types of additives may also be added.

As is explained below, the electrically conductive paste of the presentinvention has a viscosity within a predetermined range. A viscosityadjuster can be added as necessary to impart a suitable viscosity to theelectrically conductive paste. Although the amount of viscosity adjusteradded changes dependent upon the viscosity of the ultimate electricallyconductive paste, it can be suitably determined by a person withordinary skill in the art.

The electrically conductive paste of the present invention can beproduced as desired by mixing each of the above-mentioned componentswith a roll mixing mill or rotary mixer and the like. The viscosity ofthe electrically conductive paste of the present invention is preferably50 to 350 PaS in the case of using a #14 spindle with a Brookfield HBTviscometer and measuring using a utility cup at 10 rpm and 25° C.

(E) Solvent

Examples of organic solvents which can be used include alcohols such asterpineol (α-terpineol, β-terpineol, etc.), and esters such as hydroxylgroup-containing esters (2,2,4-triemthyl-1,3-pentanediolmonoisobutyrate, butyl carbitol acetate, etc.).

(F) Manufacturing Process of Solar Cell

The manufacture of the elements of the solar cell of the invention isdescribed below.

FIG. 1 illustrates the cross sectional structure of the solar cellelements in the invention. FIG. 2 also illustrates an example of theelectrode layer configuration relating to the invention, where FIG. 2(a) is the light-receiving side (surface), and FIG. 2( b) is the sidethat does not receive light (reverse).

The semiconductor substrate 1 is composed of monocrystalline orpolycrystalline silicon, or the like. The silicon substrate 1 containsp-type dopant such as boron (B), with a resistance of about 0.2 to 2.0Ω·cm, for example. Monocrystalline silicon substrates are formed by theCzochralski method or the like, and polycrystalline silicon substratesare formed by casting, or the like. Ingots formed by the Czochralskimethod or casting are cut to a size of about 10 cm×10 cm to 20 cm×20 cm,and are sliced to a thickness of no more than 500 μm, and preferably nomore than 250 μm, giving the semiconductor substrate 1.

To clean the sliced surface of the semiconductor 1, the surface isetched with trace amounts of NaOH or KOH, or hydrofluoric acid,hydrofluoronitric acid, or the like.

A textured (roughened surface) structure having the function of loweringthe optical reflectance is then preferably formed using dry etching, wetetching, or the like on the surface of the semiconductor substrate thatwill serve as the incoming light side (light-receiving side).

An n-type diffusion layer 2 is then formed. Phosphorus (P) is preferablyused as the doping element for producing the n-type, giving an n+ typewith a sheet resistance of about 30 to 300 Ω/°, for example. Thisresults in the formation of a pn junction with the p-type bulk area. Thediffusion layer 2 may be formed on the light-receiving side of thesemiconductor substrate, or the like, and may be formed, for example, byan application and thermal diffusion method in which P₂O₅ in the form ofa paste is applied and thermally diffused, a gas phase thermal diffusionmethod in which POC13 (phosphorus oxychloride) in the form of a gas isused as the diffusion source, an ion implantation method in which p+ions are directly diffused, or the like. The diffusion layer 2 is formedto a depth of about 0.2 to 0.5 μm.

Additionally, diffusion areas formed in locations where no diffusion isexpected can subsequently be eliminated by etching. Parts of thediffusion layer 2 other than on the light-receiving side of thesemiconductor substrate 1 may be removed by applying a resist film onthe light-receiving side of the semiconductor substrate 1, etching thelayer with hydrofluoric acid or a mixture of hydrofluoric acid andnitric acid, and then removing the resist film. Furthermore, when a BSFarea 4 is formed with aluminum paste on the reverse side (the side thatis not the light-receiving side) as described below, the aluminum, whichis a p-type doping agent, can be diffused to an adequate depth at anadequate concentration, thus rendering negligible the effects of shallown-type diffusion layers that have already been diffused and obviatingany particular need to remove n-type diffusion layers formed on thereverse side.

An anti-reflection layer 3 is then formed. SiNx film (there is somelatitude in the compositional ratio (x), based on Si₃N₄ stoichiometry),TiO₂ film, SiO₂ film, MgO film, ITO film, SnO₂ film, ZnO film, and thelike can be used as material for the anti-reflection layer 3. Thethickness may be selected in accordance with the semiconductor material,so as to bring about suitable non-reflecting conditions in relation toincident light. A semiconductor substrate 1 that is a silicon substrate,for example, may be about 500 to 1200 Å, with a refractive index ofabout 1.8 to 2.3.

The anti-reflection layer 3 may be produced by PECVD, deposition,sputtering, or the like. The anti-reflection layer 3 is patterned with apredetermined pattern to form a surface electrode 5 when no surfaceelectrode 4 is formed by the fire-through method described below.Examples of patterning methods which can be used include etching (wet ordry) using a mask such as a resist, and methods in which a mask ispre-formed at the same time that the anti-reflection film 3 is formedand is then removed after the anti-reflection film 3 has been formed. Onthe other hand, no patterning is needed when what is referred to as thefire-through method is used, wherein a conductive paste for the surfaceelectrode 5 is directly applied and fired onto the anti-reflection film3 so as to bring about electrical contact between the surface electrode4 and diffusion layer 2 (FIG. 2A).

The BSF layer 4 is then preferably formed. Here, the BSF layer 4 refersto an area comprising p-type dopant diffused in a high concentration onthe reverse side of the semiconductor substrate 1, and has the functionof preventing decreases in efficiency caused by carrier recombination. B(boron) and Al (aluminum) can be used as impurity elements, and theimpurity element concentration can be increased to a high concentrationto produce the p+ type, thereby allowing ohmic contact to be obtainedwith the reverse side electrode 6 described below.

The surface electrode 5 and reverse side electrode 6 are then formed onthe surface and reverse of the semiconductor substrate 1. The electrodesare formed by applying the conductive paste for solar cell elements inthe invention using a common application method on the surface of thesemiconductor substrate 1 and firing the paste for dozens of seconds todozens of minutes at a peak temperature of 700 to 850° C. to formelectrodes. The conductive paste is also preferably based on silverwhich has low resistance.

The present invention is particularly significant when the electrodepaste is fired in a large-scale firing furnace. When the paste of theinvention is used, there will be less of a decrease in yield duringproduction, despite temperature variation in large-scale firingfurnaces. Specifically, the present invention is effective in firingfurnaces with a conveyor belt width of at least 20 cm, and moreeffective in firing furnaces with a conveyor belt width of at least 30cm. To improve productivity in the firing process, several rows of cellsare sometimes arranged oriented in the direction in which the belt isconveyed and are fired. In such cases, the necessary belt width is widerthan for one row, while also resulting in greater temperature variationin the firing furnace. The paste of the present invention isparticularly effective for firing processes with such substantialtemperature variation.

EXAMPLES

1) 10 parts ethyl cellulose resin was added to 90 parts terpineol, themixture was stirred and dissolved for about 2 hours while heated to 80°C., and the solution was then allowed to stand until returned to roomtemperature, giving a binder solution.

2) 50 parts Pd powder was mixed into 50 parts of the ethyl celluloseresin solution of 1), and the mixture was kneaded with 3 rolls, giving aPd paste.

3-1) 3 parts of the Pd paste of 2) was added to 100 parts solar cellpaste PV145 (Ag paste) by DuPont, and the mixture was stirred tohomogeneity in a defoaming stirrer, giving a paste A.

3-2) 50 parts PV145 was added to 50 parts of paste A, and the mixturewas stirred to homogeneity in a defoaming stirrer, giving paste B.

3-3) 50 parts of PV145 was added to 50 parts of the paste B, and themixture was stirred to homogeneity in a defoaming stirrer, giving pasteC.

3-4) 50 parts of PV145 was added to 50 parts of the paste C, and themixture was stirred to homogeneity in a defoaming stirrer, giving pasteD.

TABLE 1 Paste A Paste B Paste C Paste D Paste E PV145 100 100 100 100100 (Ag paste) Amount of Pd added 1.5 0.75 0.375 0.1875 0 Bindersolution 1.5 0.75 0.375 0.1875 0

The resulting electrode paste was used to produce a solar cell in thefollowing manner, and the conversion efficiency was then evaluated. Theresults are given in Table 2.

Sample Preparation

An anti-reflection film and a 1.5 square inch textured monocyrstallineSi wafer for a solar cell were prepared. PV381 by DuPont was applied byscreen printing on reverse side of Si wafer and dried in an oven at 150°C./5 min, forming an Al electrode on the reverse side.

Pastes of examples and comparative examples were applied by screenprinting to the light-receiving side of wafers and dried at 150° C./5min in ovens to form grid electrodes on the surface. The configurationof the reverse side Al electrode and surface grid electrode are given inFIG. 3 for reference.

Firing Conditions

IR heated belt furnaces were used for firing under the followingconditions.

Maximum temperature settings: 770° C., 750° C., 740° C., 730° C.

Belt speed: 270 cm/min

(Conditions for measuring conversion efficiency)

IV Tester: NTC-M-150A, by NPC

Conditions: AM1.5, temperature: 25° C., radiation intensity: 1000 W/m2

TABLE 2 Example Example Example Example Comparative 1 2 3 4 Example 1Paste paste A paste B paste C paste D paste E Amount of 1.5 0.75 0.3750.1875 0 Pd added 770° C. 15.1 15.1 15.0 15.0 15.2 750° C. 14.7 14.714.4 14.8 14.9 740° C. 14.2 14.2 13.6 13.8 12.9 730° C. 11.9 11.6 11.710.2 10.8

The tables show that the paste of the invention gave a better conversionefficiency over a broad range of firing temperature conditions. That is,solar cells with a high conversion efficiency can be obtained despitesome temperature variation in the firing furnace. Solar cells having ahigh conversion efficiency are also obtained despite deviation from thetarget firing temperature as a result of imperfect control of the firingfurnace.

1. A method for producing a solar cell electrode, comprising the stepsof: applying on at least part of a light-receiving surface of asemiconductor substrate a conductive paste comprising conductivecomponent, glass frit, and resin binder, wherein the conductivecomponent comprises silver particles and core-shell particles in which ametal selected from the group consisting of Pd, Ir, Pt, Ru, Ti, and Cois coated on a surface of silver or copper; and firing the conductivepaste.
 2. A method for producing a solar cell electrode according toclaim 1, wherein the firing step is carried out in a firing furnace inwhich a width of the a moving belt in the firing furnace is at least 20cm.
 3. A method for producing a solar cell electrode according to claim1, wherein the core-shell particles are particles in which palladium iscoated on a surface of silver particle.
 4. A method for producing asolar cell electrode according to claim 1, wherein mean particlediameter of the silver particles is 0.1 to 10 μm. 25
 5. A method forproducing a solar cell electrode according to claim 1, wherein meanparticle diameter of the core-shell particle is 0.1 to 20 μm.
 6. Amethod for producing a solar cell electrode according to claim 1,wherein content of the core-shell particles is 0.01 to 20 wt %, based onthe total amount of the paste.
 7. A method for producing a solar cellelectrode according to claim 4, wherein content of the core-shellparticles is 0.01 to 20 wt %, based on the total amount of the paste. 8.A method for producing a solar cell electrode according to claim 5,wherein content of the core-shell particles is 0.01 to 20 wt %, based onthe total amount of the paste.